MP04HB910
MP04HB910
Dual Rectifier Diode Module
Preliminary Information
DS5425-1.2 February 2001
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (Non-toxic) Isolation Medium
KEY PARAMETERS
V
RRM
3000V
915A
I
F(AV)
20000A
I
FSM (per arm)
1440A
I
F(RMS)
3000V
V
isol
APPLICATIONS
s
Power Supplies
s
Large IGBT Circuit 'Front Ends'
s
Rectifiers
s
Battery Chargers
1
2
3
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
3000
2800
2600
2400
Conditions
MP04HB910-30
MP04HB910-28
MP04HB910-26
MP04HB910-24
T
vj
= –40˚ to 150˚C,
V
RSM
= V
RRM
+ 100V
Fig.1 HB circuit configuration
Lower voltage grades available
ORDERING INFORMATION
Order As:
MP04HB910-XX
XX shown in the part number about represents V
RRM
/100
selection required.
Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.
Outline type code:
MP04
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
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MP04HB910
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Symbol
I
F(AV)
Parameter
Mean forward current
Conditions
Half wave resistive load
T
case
= 75
o
C
T
case
= 85
o
C
T
case
= 100
o
C
I
F(RMS)
RMS value
T
case
= 75
o
C
T
case
= 85
o
C
T
case
= 100
o
C
I
FSM
I
2
t
I
FSM
I
2
t
V
isol
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Isolation voltage
10ms half sine; T
j
= 150
o
C
V
R
= 0
10ms half sine; T
j
= 150
o
C
V
R
= 50% V
RRM
Commoned terminals to base plate AC RMS, 1 min, 50Hz
Max.
915
830
695
1440
1305
1090
20
2.0 x 10
6
16
1.28 x 10
6
3000
Units
A
A
A
A
A
A
kA
A
2
s
kA
A
2
s
V
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
(per diode)
dc
Halfwave
3 Phase
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Screw torque
Mounting
Electrical connections
-
Weight (nominal)
-
Reverse (blocking)
-
Conditions
Min.
-
-
Max.
0.056
0.060
0.066
150
150
-
Units
o
C/W
o
C/W
C/W
o
-
-
–40
6 (53)
-
-
o
C
C
o
Nm (lb.ins)
12 (106) Nm (lb.ins)
1580
g
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MP04HB910
CHARACTERISTICS
Symbol
I
RRM
Q
S
I
RR
V
TO
r
T
Parameter
Peak reverse current
Total stored charge
Peak recovery current
Threshold voltage. See Note 1.
Slope resistance. See Note 1.
Conditions
At V
RRM
, T
case
= 150
o
C
I
F
= 1000A, dI
RR
/dt = 3A/µs
T
case
= 150˚C, V
R
= 100V
At T
vj
= 150˚C
At T
vj
= 150˚C
Min.
-
-
-
-
-
Max.
50
1600
85
0.7
0.29
Units
mA
µC
A
V
mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in
the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.
CURVES
2500
Measured under pulse
conditions
2200
2000
1800
Power dissipation (Watts, per arm)
Instantaneous forward current I
F
- (A)
2000
1600
1400
1200
1000
800
600
400
200
30°
60°
90°
120°
180°
DC
1500
T
j
= 150˚C
T
j
= 25˚C
1000
500
0
0.5
0.75
1.0
1.25
1.5
0
0
Instantaneous forward voltage V
F
- (V)
200 400 600 800 1000 1200 1400 1600 1800
Forward current, (Average, per arm) I
F(AV)
- (A)
Fig.3 Maximum (limit) forward characteristics
Fig.4 Power dissipation curves
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MP04HB910
10000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 1000A
1000
Conditions:
T
j
= 175˚C
V
R
= 100V
I
F
= 1000A
Reverse current I
RR
- (A)
Stored charge Q
S
- (µC)
1000
100
I
F
Q
S
dI
F
/dt
100
0.1
I
RR
100
10
1.0
10
Rate of decay of forward current dI
F
/dt - (A/µs)
100
1.0
10
Rate of decay of on-state current dI
F
/dt - (A/µs)
Fig.5 Maximum stored charge
Fig.6 Maximum reverse recovery current
35
I
2
t
30
=
Î
2
xt
1.4
2
0.06
Thermal resistance, R
th(j-c)
- (°C/W)
1.3
Peak half sine forward current - (kA)
0.05
25
1.2
0.04
I
2
t value - (A
2
s x 10
6
)
20
1.1
0.03
15
I
2
t
10
1.0
0.02
0.9
5
0.8
0.01
0
1
ms
10
1
2 3
5
10 20
0.7
50
0
0.001
0.01
0.1
Cycles at 50Hz
Duration
1
10
Time - (Seconds)
100
1000
Fig.7 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
@ T
c
- 150˚C)
Fig.8 Transient thermal impedance - dc
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MP04HB910
90
80
70
60
50
40
30
20
10
0
200
400
600
800
1000 1200 1400
Forward current (Average, per arm), I
F(AV)
- (A)
1600
30°
60°
90°
120°
180°
DC
Maximum permissble case temperature - (°C)
Fig.9 Maximum permissible case temperature vs forward
current per arm at various conduction angles, 50/60Hz
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DSP 与 ARM 处理器
